Infineon Technologies - BSP135IXTSA1

  1. Home
  2. Infineon Technologies - BSP135IXTSA1
BSP135IXTSA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSP135IXTSA1
Description Small Signal Field-Effect Transistors;
Datasheet BSP135IXTSA1 Datasheet
In Stock1,025
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,025 - -

Popular Products

Category Top Products

MMBF170 by Onsemi

MMBF170

Onsemi

The Onsemi MMBF170 is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With 0.5A max drain current and 5 ohm on resistance, it offers efficient performance in small outline packages.
NUD3124LT1G by Onsemi

NUD3124LT1G

Onsemi

NUD3124LT1G by Onsemi is a N-CHANNEL FET with 28V DS Breakdown Voltage, 0.15A ID, and 1.4 ohm RDS(ON). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Features built-in diode and resistor in a small outline package for surface mount assembly.
BS170 by Siemens

BS170

Siemens

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Package Shape: ROUND;
2N7000-TA by Vishay Semiconductors

2N7000-TA

Vishay Semiconductors

Vishay Semiconductors' 2N7000-TA is a N-CHANNEL FET with 60V DS breakdown voltage, 0.3A ID, and 5 ohm RDS. Ideal for switching applications due to its single configuration with built-in diode. Operating in enhancement mode, it has a max temp of 150°C and features a cylindrical package shape.
FDN339AN by Fairchild Semiconductor

FDN339AN

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain-Source On Resistance: .035 ohm; Terminal Form: GULL WING;
FDN357N by Onsemi

FDN357N

Onsemi

FDN357N by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage and 1.9A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a low on-resistance of 0.06 ohm. The small outline package with gull wing terminals makes it suitable for surface mount designs at temperatures up to 150°C.
BSS138W by Diodes Incorporated

BSS138W

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Power Dissipation Ambient: .2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDS6679AZ by Onsemi

FDS6679AZ

Onsemi

FDS6679AZ by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13A Drain Current, 0.0093 ohm On Resistance, and 745pF Feedback Capacitance. With ENHANCEMENT MODE operation and GULL WING terminals, it offers reliable performance in various electronic circuits.
BSS123 by Siemens

BSS123

Siemens

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON;
FDG8850NZ by Fairchild Semiconductor

FDG8850NZ

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Position: DUAL; Qualification: Not Qualified;
BSS138 by General Semiconductor

BSS138

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
NDC7003P by Fairchild Semiconductor

NDC7003P

Fairchild Semiconductor

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .34 A;
2N7002 by Promax-johnton

2N7002

Promax-johnton

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Drain-Source On Resistance: 7.5 ohm; Minimum DS Breakdown Voltage: 60 V;
BSS84,215 by NXP Semiconductors

BSS84,215

NXP Semiconductors

NXP Semiconductors' BSS84,215 is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.25W.
SI2302CDS-T1-E3 by Vishay Intertechnology

SI2302CDS-T1-E3

Vishay Intertechnology

Vishay Intertechnology's SI2302CDS-T1-E3 is a N-CHANNEL FET with 20V DS Breakdown Voltage and 2.6A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.057 ohm On Resistance, and operates in ENHANCEMENT MODE at up to 150°C.
BS170FTA by Diodes Incorporated

BS170FTA

Diodes Incorporated

Diodes Inc. BS170FTA is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.15A ID, and 5 ohm RDS(on). Ideal for small signal applications in electronics due to its SINGLE configuration, ENHANCEMENT MODE operation, and SMALL OUTLINE package style.
BSS123 by Zetex Plc

BSS123

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Drain Current (Abs) (ID): .17 A;
SI2301BDS-T1-E3 by Vishay Intertechnology

SI2301BDS-T1-E3

Vishay Intertechnology

SI2301BDS-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage, 2.2A ID, and 0.1 ohm RDS(on). Ideal for small signal applications in electronics due to its ENHANCEMENT MODE operation, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
2N7002 by Central Semiconductor

2N7002

Central Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .115 A; Maximum Drain Current (Abs) (ID): .115 A;
TN2404K-T1-GE3 by Vishay Intertechnology

TN2404K-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's TN2404K-T1-GE3 is a N-channel FET with 240V DS breakdown voltage, 0.2A max drain current, and 4 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.36W at 150°C.