BSP135L6327HTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSP135L6327HTSA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Operating Mode: DEPLETION MODE;
Datasheet	BSP135L6327HTSA1 Datasheet
In Stock	1,579

NAME	DESCRIPTION
Other Names:	SP000089206 BSP135 L6327-ND BSP135 L6327 BSP135L6327XT 2156-BSP135L6327HTSA1-ITTR INFINFBSP135L6327HTSA1 BSP135L6327HTSA1TR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.12 A
Maximum Pulsed Drain Current (IDM):	.48 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	4
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	45 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,579	-	-

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