BSP170PH6327 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSP170PH6327
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 7.6 A; No. of Elements: 1; Terminal Position: DUAL;
Datasheet	BSP170PH6327 Datasheet
In Stock	2,328

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	70 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	1.9 A
Maximum Pulsed Drain Current (IDM):	7.6 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	4
Minimum DS Breakdown Voltage:	60 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.3 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,328	-	-

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