Infineon Technologies - BSP171PE6327

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BSP171PE6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP171PE6327
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BSP171PE6327 Datasheet
In Stock1,484
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.9 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .3 ohm
Maximum Feedback Capacitance (Crss): 55 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
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