Infineon Technologies - BSP179H6327XTSA1

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BSP179H6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP179H6327XTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Minimum DS Breakdown Voltage: 400 V; Maximum Turn Off Time (toff): 127 ns;
Datasheet BSP179H6327XTSA1 Datasheet
In Stock692
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton): 22.3 ns
Maximum Drain Current (ID): .21 A
Maximum Pulsed Drain Current (IDM): .83 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1.8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 127 ns
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 1.8 W
Maximum Drain-Source On Resistance: 18 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: 2156-BSP179H6327XTSA1
SP001212770
INFINFBSP179H6327XTSA1
Maximum Feedback Capacitance (Crss): 9 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 400 V
Reference Standard: AEC-Q100; IEC-61249-2-21
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