Infineon Technologies - BSP296NH6327

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BSP296NH6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP296NH6327
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
Datasheet BSP296NH6327 Datasheet
In Stock3,521
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.2 A
Maximum Pulsed Drain Current (IDM): 4.6 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .6 ohm
Avalanche Energy Rating (EAS): 15 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Reference Standard: AEC-Q101
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