BSP316PL6327HTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSP316PL6327HTSA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 100 V; Maximum Pulsed Drain Current (IDM): 2.72 A;
Datasheet	BSP316PL6327HTSA1 Datasheet
In Stock	1,536

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.68 A
Maximum Pulsed Drain Current (IDM):	2.72 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
JESD-609 Code:	e3
No. of Terminals:	4
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	LOGIC LEVEL COMPATIBLE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	1.8 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,536	-	-

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