Infineon Technologies - BSP316PL6327HTSA1

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BSP316PL6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSP316PL6327HTSA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 100 V; Maximum Pulsed Drain Current (IDM): 2.72 A;
Datasheet BSP316PL6327HTSA1 Datasheet
In Stock1,536
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .68 A
Maximum Pulsed Drain Current (IDM): 2.72 A
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 4
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 1.8 ohm
Other Names: BSP316PL6327INDKR
BSP316PL6327HTSA1TR
BSP316PL6327HTSA1DKR
BSP316PL6327
BSP316PL6327HTSA1CT
BSP316P L6327-ND
BSP316P L6327
BSP316PL6327XT
BSP316PL6327INCT
BSP316PL6327INTR-ND
BSP316PL6327INTR
BSP316PL6327INDKR-ND
BSP316PL6327INCT-ND
SP000089222
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Additional Features: LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): 260
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