BSP322PH6327 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSP322PH6327
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; No. of Elements: 1; Maximum Drain Current (ID): 1 A;
Datasheet	BSP322PH6327 Datasheet
In Stock	805

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	13.4 ns
Maximum Drain Current (ID):	1 A
Maximum Pulsed Drain Current (IDM):	4 A
Surface Mount:	YES
No. of Terminals:	4
Maximum Power Dissipation (Abs):	1.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	44.3 ns
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.8 ohm
Avalanche Energy Rating (EAS):	57 mJ
Maximum Feedback Capacitance (Crss):	51 pF
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101

Pricing (USD)

Qty.	Unit Price	Ext. Price
805	-	-

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