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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSP373L6327HTSA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Reference Standard: AEC-Q101; Transistor Element Material: SILICON; |
| Datasheet | BSP373L6327HTSA1 Datasheet |
| In Stock | 38 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Turn On Time (ton): | 60 ns |
| Maximum Drain Current (ID): | 1.7 A |
| Maximum Pulsed Drain Current (IDM): | 6.8 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 1.8 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 195 ns |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Power Dissipation Ambient: | 1.8 W |
| Maximum Drain-Source On Resistance: | .3 ohm |
| Avalanche Energy Rating (EAS): | 45 mJ |
| Other Names: |
BSP373L6327INCT-ND BSP373 L6327-ND BSP373L6327INCT BSP373L6327HTSA1TR BSP373L6327HTSA1DKR BSP373L6327INDKR-ND BSP373L6327 BSP373L6327XT BSP373 L6327 BSP373L6327HTSA1CT 2156-BSP373L6327HTSA1-ITTR SP000087065 BSP373L6327INTR INFINFBSP373L6327HTSA1 BSP373L6327INTR-ND BSP373L6327INDKR |
| Maximum Feedback Capacitance (Crss): | 105 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Additional Features: | AVALANCHE RATED |
| Reference Standard: | AEC-Q101 |
