Infineon Technologies - BSR802NL6327HTSA1

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BSR802NL6327HTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSR802NL6327HTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
Datasheet BSR802NL6327HTSA1 Datasheet
In Stock23,029
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 2.9 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .023 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: BSR802NL6327HTSA1CT
BSR802NL6327HTSA1DKR
BSR802N L6327-ND
BSR802N L6327
BSR802N L6327INTR
SP000442484
BSR802NL6327HTSA1TR
BSR802N L6327INDKR-ND
BSR802N L6327INCT
BSR802NL6327
BSR802N L6327INDKR
BSR802N L6327INTR-ND
BSR802N L6327INCT-ND
Maximum Feedback Capacitance (Crss): 73 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
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