Infineon Technologies - BSS139E6906

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BSS139E6906 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSS139E6906
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet BSS139E6906 Datasheet
In Stock1,417
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .1 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .36 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 30 ohm
Maximum Feedback Capacitance (Crss): 3.3 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .1 A
Peak Reflow Temperature (C): NOT SPECIFIED
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