Infineon Technologies - BSS205NH6327XTSA1

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BSS205NH6327XTSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSS205NH6327XTSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .05 ohm; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
Datasheet BSS205NH6327XTSA1 Datasheet
In Stock50,967
NAME DESCRIPTION
Other Names: BSS205N H6327
BSS205NH6327XTSA1CT
BSS205NH6327XTSA1DKR
SP000929180
BSS205N H6327TR-ND
BSS205N H6327CT-ND
2156-BSS205NH6327XTSA1TR
BSS205N H6327DKR
BSS205N H6327DKR-ND
BSS205NH6327XTSA1TR
BSS205N H6327-ND
BSS205N H6327CT
BSS205NH6327
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 24 pF
Maximum Drain Current (ID): 2.5 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance: .05 ohm
Moisture Sensitivity Level (MSL): 1
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