BSS229 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSS229
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .63 W; Minimum DS Breakdown Voltage: 250 V; No. of Terminals: 3;
Datasheet	BSS229 Datasheet
In Stock	229

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.07 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.63 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	100 ohm
Maximum Feedback Capacitance (Crss):	3 pF
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	250 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.07 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
229	-	-

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