Infineon Technologies - BSS63E6327

  1. Home
  2. Infineon Technologies - BSS63E6327
BSS63E6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSS63E6327
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING;
Datasheet BSS63E6327 Datasheet
In Stock857
NAME DESCRIPTION
Nominal Transition Frequency (fT): 150 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .8 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 100 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
857 - -

Popular Products

Category Top Products

2N2907A by Semiconductor Technology

2N2907A

Semiconductor Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
BC847C by Zetex Plc

BC847C

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBT2222A by Micro Commercial Components

MMBT2222A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
MMBTA56LT1G by Onsemi

MMBTA56LT1G

Onsemi

MMBTA56LT1G by Onsemi is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.3W, hFE of 100, and fT of 50MHz. Ideal for amplifier applications due to its small outline package style and operating temperature range from -55°C to 150°C.
2N2222A by Diotec Semiconductor Ag

2N2222A

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
BC847,215 by Nexperia

BC847,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BC547B by SPC TECHNOLOGY/ MULTICOMP

BC547B

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;
BC547C by Itt Semiconductor

BC547C

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC846B by Micro Commercial Components

BC846B

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
JANTX2N2222A by Silicon Transistor

JANTX2N2222A

Silicon Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC817-40 by Samsung

BC817-40

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: DUAL;
BC547-B by Samsung

BC547-B

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
MMBT3904 by Jiangsu Changjiang Electronics Technology

MMBT3904

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
BC547-C by Secos

BC547-C

Secos

Secos BC547-C is a NPN BJT with hFE of 110, VCE of 45V, and fT of 150MHz. Ideal for low-power applications in electronics due to its 0.1A IC rating and silicon transistor element material. Its through-hole package makes it suitable for various circuit configurations.
ULN2003AIPWRG4 by Texas Instruments

ULN2003AIPWRG4

Texas Instruments

ULN2003AIPWRG4 by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, making it ideal for switching applications. This surface-mount transistor in a small outline package is made of silicon with Gull Wing terminals.
BC847B by ROHM

BC847B

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N2222A by STMicroelectronics

2N2222A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
2N2219A by Swampscott Electronics

2N2219A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
PIMN31,115 by Nexperia

PIMN31,115

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 6;
2N3904 by General Semiconductor

2N3904

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;