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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSS83PH6327XTSA1 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30; |
| Datasheet | BSS83PH6327XTSA1 Datasheet |
| In Stock | 119,300 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .33 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 3 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
BSS83P H6327CT BSS83PH6327XTSA1DKR BSS83PH6327XTSA1TR SP000702486 BSS83P H6327TR-ND BSS83P H6327DKR BSS83P H6327DKR-ND BSS83P H6327 BSS83P H6327CT-ND BSS83PH6327XTSA1CT BSS83P H6327-ND BSS83PH6327 |
| Maximum Feedback Capacitance (Crss): | 9 pF |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Peak Reflow Temperature (C): | 260 |









