Image shown is a representation only.
| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BSS83PL6327HTSA1 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 9 pF; Maximum Drain-Source On Resistance: 2 ohm; Minimum DS Breakdown Voltage: 60 V; |
| Datasheet | BSS83PL6327HTSA1 Datasheet |
| In Stock | 474 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
BSS83PL6327TR BSS83PL6327HTSA1TR Q3291502 BSS83PL6327CT_ND BSS83PL6327DKR BSS83PL6327XT SP000247311 BSS83P L6327 BSS83PL6327HTSA1DKR BSS83P L6327-ND BSS83PL6327-ND BSS83PL6327DKR-ND BSS83PL6327HTSA1CT BSS83PL6327INACTIVE -BSS83PL6327 BSS83PL6327TR-ND BSS83P L6327INACTIVE-ND BSS83PL6327CT-ND BSS83PL6327 |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Feedback Capacitance (Crss): | 9 pF |
| Maximum Drain Current (ID): | .33 A |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | 2 ohm |









