BSV236SPH6327XTSA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSV236SPH6327XTSA1
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Transistor Element Material: SILICON;
Datasheet	BSV236SPH6327XTSA1 Datasheet
In Stock	22,702

NAME	DESCRIPTION
Other Names:	BSV236SPH6327XT BSV236SP H6327 SP000917672 BSV236SP H6327TR-ND BSV236SP H6327DKR BSV236SP H6327CT-ND BSV236SPH6327XTSA1CT BSV236SP H6327DKR-ND BSV236SP H6327-ND BSV236SP H6327CT BSV236SPH6327 BSV236SPH6327XTSA1DKR BSV236SPH6327XTSA1TR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	1.5 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
No. of Terminals:	6
Minimum DS Breakdown Voltage:	20 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101
Maximum Drain-Source On Resistance:	.175 ohm
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
22,702	-	-

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