Infineon Technologies - BSZ034N04LSATMA1

  1. Home
  2. Infineon Technologies - BSZ034N04LSATMA1
BSZ034N04LSATMA1 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ034N04LSATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 40 V; No. of Terminals: 8;
Datasheet BSZ034N04LSATMA1 Datasheet
In Stock37,948
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 70 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 19 A
Maximum Pulsed Drain Current (IDM): 160 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 8
Minimum DS Breakdown Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0046 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
37,948 - -

Popular Products

Category Top Products

IRF9Z34NSTRLPBF by International Rectifier

IRF9Z34NSTRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: SINGLE; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; Additional Features: AVALANCHE RATED, HIGH RELIABILITY;
IRF540PBF by International Rectifier

IRF540PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Avalanche Energy Rating (EAS): 230 mJ; JESD-609 Code: e3;
FDB52N20TM by Onsemi

FDB52N20TM

Onsemi

FDB52N20TM by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 200V. It is an N-channel, single configuration transistor with a built-in diode, making it suitable for switching applications. With a max pulsed drain current of 208A and a max power dissipation of 357W, it offers high performance in a small outline package style.
PSMN4R8-100BSE by NXP Semiconductors

PSMN4R8-100BSE

NXP Semiconductors

PSMN4R8-100BSE by NXP is an N-channel Power FET with 100V DS breakdown voltage and 120A max drain current. Ideal for switching applications, it features a built-in diode, 0.0048 ohm RDS(on), and 707A pulsed drain current.
SCT3080KLGC11 by ROHM

SCT3080KLGC11

ROHM

ROHM's SCT3080KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 77A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.104 ohm max drain-source resistance.
BSZ15DC02KDHXTMA1 by Infineon Technologies

BSZ15DC02KDHXTMA1

Infineon Technologies

Infineon BSZ15DC02KDHXTMA1 is a Power FET with N/P-Channel, 20V DS Breakdown Voltage, and 0.055 ohm RDS(ON). Commonly used in automotive applications due to AEC-Q101 standard compliance.
IRLR3110ZTRPBF by International Rectifier

IRLR3110ZTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Form: GULL WING;
DMP3098L-7 by Diodes Incorporated

DMP3098L-7

Diodes Incorporated

DMP3098L-7 by Diodes Inc. is a P-channel power FET with a min DS breakdown voltage of 30V and max pulsed drain current of 11A. It is used for switching applications and operates in enhancement mode.
SIR873DP-T1-GE3 by Vishay Intertechnology

SIR873DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIR873DP-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 50A and EAS of 80mJ, this MOSFET has 0.0475 ohm Drain-Source On Resistance. Its small outline package and matte tin finish make it suitable for various electronic designs.
SI7232DN-T1-GE3 by Vishay Intertechnology

SI7232DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7232DN-T1-GE3 is an N-channel Power FET with 2 elements, built-in diode, and a max drain current of 25A. Ideal for switching applications, it operates in enhancement mode with a min DS breakdown voltage of 20V. With a package style of small outline and matte tin terminal finish, it offers high performance in a compact design.
IRF5305STRLPBF by International Rectifier

IRF5305STRLPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; Case Connection: DRAIN;
IRFZ44NS by NXP Semiconductors

IRFZ44NS

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
IRF640PBF by International Rectifier

IRF640PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 18 A; Terminal Form: THROUGH-HOLE;
PSMN040-100MSEX by Nexperia

PSMN040-100MSEX

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Avalanche Energy Rating (EAS): 54 mJ; Transistor Application: SWITCHING;
IRF7303TRPBF by International Rectifier

IRF7303TRPBF

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE;
IRF640 by International Rectifier

IRF640

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; Maximum Power Dissipation Ambient: 125 W;
DMP4065S-7 by Diodes Incorporated

DMP4065S-7

Diodes Incorporated

DMP4065S-7 by Diodes Inc. is a P-channel FET with 40V DS breakdown voltage and 20A IDM, ideal for switching applications. It operates in enhancement mode, has 0.08 ohm RDS(on), and can handle up to 1.4W power dissipation. With a max temp of 150°C, it's suitable for various electronic designs requiring high-performance MOSFETs.
IRLML6344TRPBF by International Rectifier

IRLML6344TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;
STP40NF10L by STMicroelectronics

STP40NF10L

STMicroelectronics

STP40NF10L by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage, 160A IDM, and 0.036 ohm RDS(on). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175°C temperature.
IRF640NPBF by International Rectifier

IRF640NPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;