BSZ076N06NS3G by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSZ076N06NS3G
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Transistor Application: SWITCHING; Maximum Drain-Source On Resistance: .0076 ohm;
Datasheet	BSZ076N06NS3G Datasheet
In Stock	556

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	14 A
Maximum Pulsed Drain Current (IDM):	80 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	69 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0076 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	118 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	20 A
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
556	$1.850	$1,028.600

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