BSZ0908NDXTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSZ0908NDXTMA1
Description	N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain-Source On Resistance: .025 ohm; Minimum DS Breakdown Voltage: 30 V;
Datasheet	BSZ0908NDXTMA1 Datasheet
In Stock	930

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	19 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	8
Minimum DS Breakdown Voltage:	30 V
Maximum Power Dissipation (Abs):	2.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN SOURCE
Maximum Drain-Source On Resistance:	.025 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
930	-	-

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