Infineon Technologies - BSZ0909NDXTMA1

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BSZ0909NDXTMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ0909NDXTMA1
Description N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 4 mJ; JESD-30 Code: S-PDSO-N8; Minimum Operating Temperature: -55 Cel;
Datasheet BSZ0909NDXTMA1 Datasheet
In Stock701
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 4 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 4.1 A
Maximum Pulsed Drain Current (IDM): 40 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
No. of Terminals: 8
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Maximum Drain-Source On Resistance: .025 ohm
Moisture Sensitivity Level (MSL): 1
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Pricing (USD)

Qty. Unit Price Ext. Price
701 $0.540 $378.540

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