BSZ100N06LS3GATMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSZ100N06LS3GATMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Avalanche Energy Rating (EAS): 55 mJ; Maximum Drain-Source On Resistance: .0179 ohm;
Datasheet	BSZ100N06LS3GATMA1 Datasheet
In Stock	83,646

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	20 A
Maximum Pulsed Drain Current (IDM):	80 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	50 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N8
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0179 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	55 mJ
Other Names:	BSZ100N06LS3GATMA1DKR BSZ100N06LS3GATMA1TR SP000453672 BSZ100N06LS3GATMA1CT BSZ100N06LS3GINTR-ND BSZ100N06LS3GINCT-ND BSZ100N06LS3 G BSZ100N06LS3GINDKR-ND BSZ100N06LS3G BSZ100N06LS3GINTR BSZ100N06LS3GINCT
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
83,646	-	-

AT90CAN128-16AU by Microchip Technology is a microcontroller with 8-bit data RAM and 16-bit address bus width. It operates at a max clock frequency of 16 MHz, making it suitable for industrial applications requiring low power mode and connectivity options like CAN, SPI, and USART. With 53 I/O lines and 8-channel 10-bit ADCs, this microcontroller offers versatile peripheral support for various embedded systems.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;