Infineon Technologies - BSZ120P03NS3GATMA1

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BSZ120P03NS3GATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ120P03NS3GATMA1
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
Datasheet BSZ120P03NS3GATMA1 Datasheet
In Stock9,313
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 160 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-F8
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .02 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 73 mJ
Other Names: BSZ120P03NS3GATMA1CT
BSZ120P03NS3 G-ND
BSZ120P03NS3GATMA1TR
SP000709736
BSZ120P03NS3 G
BSZ120P03NS3GATMA1DKR
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
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