Infineon Technologies - BSZ165N04NSGATMA1

BSZ165N04NSGATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BSZ165N04NSGATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; No. of Terminals: 8; Maximum Pulsed Drain Current (IDM): 124 A;
Datasheet BSZ165N04NSGATMA1 Datasheet
In Stock1,050
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 31 A
Maximum Pulsed Drain Current (IDM): 124 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 25 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0165 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 5 mJ
Other Names: BSZ165N04NSGINTR-ND
BSZ165N04NSGINDKR-ND
IFEINFBSZ165N04NSGATMA1
BSZ165N04NS G
BSZ165N04NSG
BSZ165N04NSGATMA1DKR
BSZ165N04NSGINDKR
SP000391523
BSZ165N04NSGINCT-ND
BSZ165N04NSGATMA1CT
BSZ165N04NSGINCT
BSZ165N04NSGXT
2156-BSZ165N04NSGATMA1
BSZ165N04NSGINTR
BSZ165N04NSGATMA1TR
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 31 A
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