BTM7750GP by Infineon Technologies | Interface ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BTM7750GP
Description	HALF BRIDGE BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 15; Package Shape: RECTANGULAR; Screening Level: AEC-Q100; Driver No. of Bits: 4;
Datasheet	BTM7750GP Datasheet
In Stock	658

NAME	DESCRIPTION
Minimum Supply Voltage:	1.8 V
Package Body Material:	PLASTIC/EPOXY
Maximum Seated Height:	4.4 mm
Maximum Output Current:	.002 A
Sub-Category:	Peripheral Drivers
Surface Mount:	YES
No. of Terminals:	15
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Screening Level:	AEC-Q100
Technology:	MOS
JESD-30 Code:	R-PSSO-G15
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Built-in Protections:	OVER VOLTAGE; THERMAL; UNDER VOLTAGE
Interface IC Type:	HALF BRIDGE BASED PERIPHERAL DRIVER
Width:	9.25 mm
Turn-off Time:	180 us
Moisture Sensitivity Level (MSL):	3
Driver No. of Bits:	4
Maximum Supply Voltage:	42 V
Turn-on Time:	180 us
Nominal Output Peak Current Limit:	22 A
No. of Functions:	2
Qualification:	Not Qualified
Package Equivalence Code:	SMSIP15H,.6,55TB
Output Current Flow Direction:	SOURCE AND SINK
Length:	21.6 mm
Peak Reflow Temperature (C):	245
Terminal Pitch:	1.4 mm
Power Supplies (V):	8/18

Pricing (USD)

Qty.	Unit Price	Ext. Price
658	-	-

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

LM107H/883 by Texas Instruments is a MIL-STD-883 compliant operational amplifier with 3000uV max input offset voltage, 80dB common mode reject ratio, and 250kHz unity gain bandwidth. Ideal for military applications due to its -55 to 125 °C operating temperature range and robust metal package body material.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;