BTN7930BAUMA1 by Infineon Technologies | Interface ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BTN7930BAUMA1
Description	HALF BRIDGE BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 7; Package Code: TO-263; Package Shape: RECTANGULAR; JESD-30 Code: R-PSSO-G7;
Datasheet	BTN7930BAUMA1 Datasheet
In Stock	340,614

NAME	DESCRIPTION
Minimum Supply Voltage:	8 V
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	13.5 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	4.5 mm
Surface Mount:	YES
No. of Terminals:	7
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Technology:	MOS
JESD-30 Code:	R-PSSO-G7
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Built-in Protections:	TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
Package Code:	TO-263
Interface IC Type:	HALF BRIDGE BASED PERIPHERAL DRIVER
Width:	9.25 mm
Turn-off Time:	17 us
Maximum Supply Voltage:	18 V
Turn-on Time:	25 us
Nominal Output Peak Current Limit:	42 A
No. of Functions:	1
Output Current Flow Direction:	SOURCE AND SINK
Length:	10 mm
Additional Features:	SEATED HGT-NOM
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	1.27 mm

Pricing (USD)

Qty.	Unit Price	Ext. Price
340,614	-	-

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Insertion Tools: M81969/14-10; Tool Settings: M22520/2-10; DIN Conformity: NO;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.