Infineon Technologies - BTS100E3045A

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BTS100E3045A by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS100E3045A
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
Datasheet BTS100E3045A Datasheet
In Stock243
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8 A
Maximum Pulsed Drain Current (IDM): 32 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .3 ohm
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