Infineon Technologies - BTS113ANKSA1

BTS113ANKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS113ANKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 11.5 A;
Datasheet BTS113ANKSA1 Datasheet
In Stock838
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 11.5 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 46 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .17 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
838 $0.919 $770.122

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