Infineon Technologies - BTS244ZE3043AKSA1

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BTS244ZE3043AKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS244ZE3043AKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; No. of Elements: 1; Maximum Turn On Time (ton): 130 ns;
Datasheet BTS244ZE3043AKSA1 Datasheet
In Stock520
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 130 ns
Maximum Drain Current (ID): 35 A
Maximum Pulsed Drain Current (IDM): 188 A
Surface Mount: NO
No. of Terminals: 5
Maximum Power Dissipation (Abs): 170 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 100 ns
JESD-30 Code: R-PSFM-T5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .018 ohm
Avalanche Energy Rating (EAS): 1650 mJ
Maximum Feedback Capacitance (Crss): 400 pF
JEDEC-95 Code: TO-220
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 55 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
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