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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | BTS244ZE3062ANTMA1 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; JEDEC-95 Code: TO-263; Maximum Drain-Source On Resistance: .018 ohm; |
| Datasheet | BTS244ZE3062ANTMA1 Datasheet |
| In Stock | 698 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 130 ns |
| Maximum Drain Current (ID): | 35 A |
| Maximum Pulsed Drain Current (IDM): | 188 A |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 170 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 100 ns |
| JESD-30 Code: | R-PSSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .018 ohm |
| Avalanche Energy Rating (EAS): | 1650 mJ |
| Maximum Feedback Capacitance (Crss): | 400 pF |
| JEDEC-95 Code: | TO-263 |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -40 Cel |
| Minimum DS Breakdown Voltage: | 55 V |
| Additional Features: | AVALANCHE RATED |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
