Infineon Technologies - BTS247ZE3062AATMA1

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BTS247ZE3062AATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS247ZE3062AATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: YES; Case Connection: DRAIN; JESD-30 Code: R-PSSO-G4; Transistor Application: SWITCHING;
Datasheet BTS247ZE3062AATMA1 Datasheet
In Stock70
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 1300 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 33 A
Maximum Pulsed Drain Current (IDM): 180 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 55 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .028 ohm
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Pricing (USD)

Qty. Unit Price Ext. Price
70 $1.943 $136.010

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