Infineon Technologies - BTS282ZE3230XK

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BTS282ZE3230XK by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS282ZE3230XK
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 2000 mJ; Case Connection: DRAIN;
Datasheet BTS282ZE3230XK Datasheet
In Stock362
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Surface Mount: NO
No. of Terminals: 7
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T7
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0095 ohm
Avalanche Energy Rating (EAS): 2000 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 49 V
Additional Features: AVALANCHE RATED
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): NOT SPECIFIED
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