Infineon Technologies - BTS3160DAUMA1

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BTS3160DAUMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BTS3160DAUMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: SINGLE;
Datasheet BTS3160DAUMA1 Datasheet
In Stock8,610
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 300 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.8 A
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 4
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: ESD PROTECTED
Maximum Drain-Source On Resistance: .01 ohm
Moisture Sensitivity Level (MSL): 3
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