Infineon Technologies - BUZ31H3045AATMA1

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BUZ31H3045AATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BUZ31H3045AATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 200 V; Transistor Element Material: SILICON;
Datasheet BUZ31H3045AATMA1 Datasheet
In Stock556
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 14.5 A
Maximum Pulsed Drain Current (IDM): 58 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .2 ohm
Avalanche Energy Rating (EAS): 200 mJ
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): NOT SPECIFIED
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