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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | CFY35/20E6327 |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Additional Features: LOW NOISE; Case Connection: SOURCE; Terminal Form: GULL WING; |
| Datasheet | CFY35/20E6327 Datasheet |
| In Stock | 795 |
| NAME | DESCRIPTION |
|---|---|
| Minimum Power Gain (Gp): | 8 dB |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE |
| Transistor Element Material: | GALLIUM ARSENIDE |
| Field Effect Transistor Technology: | JUNCTION |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | .06 A |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 4 |
| Minimum DS Breakdown Voltage: | 5 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | DEPLETION MODE |
| Additional Features: | LOW NOISE |
| Highest Frequency Band: | X BAND |
| Case Connection: | SOURCE |









