Infineon Technologies - CFY65-12

  1. Home
  2. Infineon Technologies - CFY65-12
CFY65-12 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number CFY65-12
Description N-CHANNEL; Maximum Drain Current (Abs) (ID): .07 A; Maximum Drain Current (ID): .07 A; Maximum Power Dissipation Ambient: .2 W; Maximum Operating Temperature: 150 Cel;
Datasheet CFY65-12 Datasheet
In Stock280
NAME DESCRIPTION
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .07 A
Maximum Drain Current (Abs) (ID): .07 A
Sub-Category: FET RF Small Signal
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .2 W
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
280 - -

Popular Products

Category Top Products

BF244C by Onsemi

BF244C

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; No. of Terminals: 3; JEDEC-95 Code: TO-92;
BF992-TAPE-13 by NXP Semiconductors

BF992-TAPE-13

NXP Semiconductors

BF992-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 20V, operates in dual gate mode, and supports very high frequency bands. This compact surface mount device ensures efficient performance with a max temp of 150 °C.
BF909TRL by NXP Semiconductors

BF909TRL

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF965 by NXP Semiconductors

BF965

NXP Semiconductors

BF965 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications, featuring a max operating temp of 150 °C and a min DS breakdown voltage of 20V. It operates in dual gate depletion mode and supports very high frequency bands. Its compact round package ensures efficient surface mounting.
BF244BRLRP by Onsemi

BF244BRLRP

Onsemi

BF244BRLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
STD6N10LT4 by STMicroelectronics

STD6N10LT4

STMicroelectronics

STD6N10LT4 by STMicroelectronics is an N-channel FET with a 100V DS breakdown voltage and 6A max drain current. It is used for switching applications, operates in enhancement mode, and has a max power dissipation of 35W. Ideal for RF small signal circuits due to its high performance and compact small outline package design.
PMBFJ308,215 by NXP Semiconductors

PMBFJ308,215

NXP Semiconductors

NXP Semiconductors' PMBFJ308,215 is an N-CHANNEL RF FET for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a 25V DS Breakdown Voltage and handles VERY HIGH FREQUENCY BAND signals. With GULL WING terminals and a SMALL OUTLINE package style, it can dissipate up to 0.25W at 150°C.
934058529115 by NXP Semiconductors

934058529115

NXP Semiconductors

N-CHANNEL; Surface Mount: YES; Terminal Form: FLAT; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .03 A; No. of Terminals: 6;
BF904A by NXP Semiconductors

BF904A

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .03 A; Transistor Application: AMPLIFIER; Package Shape: RECTANGULAR;
BF556C-T by NXP Semiconductors

BF556C-T

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;
FLC057WG by Eudyna Devices

FLC057WG

Eudyna Devices

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
BF244BRLRE by Onsemi

BF244BRLRE

Onsemi

BF244BRLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
J310 by NXP Semiconductors

J310

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Additional Features: LOW NOISE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Operating Mode: DEPLETION MODE;
BLF221B by NXP Semiconductors

BLF221B

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.4 W; Maximum Drain Current (Abs) (ID): 1 A; Transistor Element Material: SILICON;
BF992R-TAPE-7 by NXP Semiconductors

BF992R-TAPE-7

NXP Semiconductors

BF992R-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max DS breakdown voltage of 20V and operates in the very high frequency band. This surface-mount transistor ensures efficient performance with a compact design.
2N4416 by Allegro MicroSystems

2N4416

Allegro MicroSystems

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION; Transistor Element Material: SILICON;
NE3515S02-T1C-A by Renesas Electronics

NE3515S02-T1C-A

Renesas Electronics

NE3515S02-T1C-A by Renesas Electronics is a RF Small Signal FET with N-CHANNEL configuration. It has a min DS Breakdown Voltage of 3V and operates in DEPLETION MODE. This transistor is commonly used as an amplifier in the KU BAND frequency range.
MMBF5484LT1G by Onsemi

MMBF5484LT1G

Onsemi

MMBF5484LT1G by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and 3 terminals. With a max power dissipation of 0.225 W, this JUNCTION FET has a temp range of -55 to 150 °C.
BF908 by NXP Semiconductors

BF908

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Position: DUAL; Qualification: Not Qualified;
BLF202,115 by NXP Semiconductors

BLF202,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5.7 W; No. of Terminals: 8; Terminal Form: GULL WING;