CFY66-10 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	CFY66-10
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: GALLIUM ARSENIDE; Maximum Drain Current (ID): .06 A; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY;
Datasheet	CFY66-10 Datasheet
In Stock	818

NAME	DESCRIPTION
Minimum Power Gain (Gp):	10.5 dB
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Maximum Drain Current (ID):	.06 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
No. of Terminals:	4
Minimum DS Breakdown Voltage:	3.5 V
Qualification:	Not Qualified
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-CRDB-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	X BAND

Pricing (USD)

Qty.	Unit Price	Ext. Price
818	-	-

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