CFY66-10PS by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	CFY66-10PS
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: K BAND; Maximum Power Dissipation Ambient: .2 W; Additional Features: LOW NOISE;
Datasheet	CFY66-10PS Datasheet
In Stock	309

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE
Transistor Element Material:	GALLIUM ARSENIDE
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	.06 A
Sub-Category:	FET RF Small Signal
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	4
Terminal Position:	RADIAL
Package Style (Meter):	DISK BUTTON
JESD-30 Code:	O-CRDB-F4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Highest Frequency Band:	K BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	.2 W
Minimum Power Gain (Gp):	9.5 dB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	3.5 V
Qualification:	Not Qualified
Additional Features:	LOW NOISE
Reference Standard:	ESA/SCC 5613/002
Maximum Drain Current (Abs) (ID):	.06 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
309	-	-

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