Infineon Technologies - CFY6710ESZZZA1

CFY6710ESZZZA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number CFY6710ESZZZA1
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: K BAND; Minimum DS Breakdown Voltage: 3.5 V; Case Connection: SOURCE;
Datasheet CFY6710ESZZZA1 Datasheet
In Stock783
NAME DESCRIPTION
Minimum Power Gain (Gp): 10.5 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: Al/In GALLIUM ARSENIDE
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): .06 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 3.5 V
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-CRDB-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Highest Frequency Band: K BAND
Maximum Operating Temperature: 150 Cel
Reference Standard: ESA/SCC 5613/004
Case Connection: SOURCE
Maximum Power Dissipation Ambient: .2 W
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Pricing (USD)

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