CY62126EV30LL-55BVXE by Infineon Technologies | Memory ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	CY62126EV30LL-55BVXE
Description	STANDARD SRAM; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Output Characteristics: 3-STATE;
Datasheet	CY62126EV30LL-55BVXE Datasheet
In Stock	782

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.00003 Amp
Organization:	64KX16
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	20
Maximum Seated Height:	1 mm
Minimum Supply Voltage (Vsup):	2.2 V
Surface Mount:	YES
Maximum Supply Current:	35 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	48
No. of Words:	65536 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B48
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	125 Cel
Package Code:	VFBGA
Width:	6 mm
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
Memory Density:	1048576 bit
Minimum Standby Voltage:	1.5 V
Memory IC Type:	STANDARD SRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
Output Enable:	YES
No. of Functions:	1
Package Equivalence Code:	BGA48,6X8,30
Length:	8 mm
Maximum Access Time:	55 ns
No. of Words Code:	64K
Nominal Supply Voltage / Vsup (V):	3
Peak Reflow Temperature (C):	260
Parallel or Serial:	PARALLEL
Terminal Pitch:	.75 mm
Maximum Supply Voltage (Vsup):	3.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
782	$3.970	$3,104.540

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Output Voltage-1: 5 V;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;

MBR0520LT1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, has a peak reflow temperature of 260°C, and a repetitive peak reverse voltage of 20V. This diode is ideal for applications requiring high-speed switching in compact electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;