CY7C1383D-133BZXC by Infineon Technologies | Memory ICs

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	CY7C1383D-133BZXC
Description	CACHE SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 18874368 bit;
Datasheet	CY7C1383D-133BZXC Datasheet
In Stock	9

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.07 Amp
Organization:	1MX18
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	20
Maximum Seated Height:	1.4 mm
Minimum Supply Voltage (Vsup):	3.135 V
Sub-Category:	SRAMs
Surface Mount:	YES
Maximum Supply Current:	210 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	165
Maximum Clock Frequency (fCLK):	133 MHz
No. of Words:	1048576 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, LOW PROFILE
Technology:	CMOS
JESD-30 Code:	R-PBGA-B165
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	LBGA
Width:	13 mm
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	COMMON
Memory Density:	18874368 bit
Minimum Standby Voltage:	3.14 V
Memory IC Type:	CACHE SRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	0 Cel
Memory Width:	18
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	BGA165,11X15,40
Length:	15 mm
Maximum Access Time:	6.5 ns
No. of Words Code:	1M
Nominal Supply Voltage / Vsup (V):	3.3
Additional Features:	FLOW-THROUGH ARCHITECTURE
Peak Reflow Temperature (C):	260
Parallel or Serial:	PARALLEL
Terminal Pitch:	1 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V
Power Supplies (V):	2.5/3.3,3.3

Pricing (USD)

Qty.	Unit Price	Ext. Price
9	-	-

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.

Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

NE555DR by Texas Instruments is an Analog Waveform Generation IC with 8 terminals, operating voltage of 5V, and power supplies ranging from 5-15V. It is a versatile component for pulse generation applications due to its small outline package and commercial temperature grade suitability.