CY7C15632KV18-500BZXI by Infineon Technologies | Memory ICs

Image shown is a representation only.

Manufacturer	Infineon Technologies
Manufacturer's Part Number	CY7C15632KV18-500BZXI
Description	QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;
Datasheet	CY7C15632KV18-500BZXI Datasheet
In Stock	406

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.36 Amp
Organization:	4MX18
Output Characteristics:	3-STATE
Maximum Time At Peak Reflow Temperature (s):	20
Maximum Seated Height:	1.4 mm
Minimum Supply Voltage (Vsup):	1.7 V
Sub-Category:	SRAMs
Surface Mount:	YES
Maximum Supply Current:	850 mA
Terminal Finish:	TIN SILVER COPPER
No. of Terminals:	165
Maximum Clock Frequency (fCLK):	500 MHz
No. of Words:	4194304 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, LOW PROFILE
Technology:	CMOS
JESD-30 Code:	R-PBGA-B165
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	LBGA
Width:	13 mm
Moisture Sensitivity Level (MSL):	3
Input/Output Type:	SEPARATE
Memory Density:	75497472 bit
Minimum Standby Voltage:	1.7 V
Memory IC Type:	QDR SRAM
JESD-609 Code:	e1
Minimum Operating Temperature:	-40 Cel
Memory Width:	18
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	BGA165,11X15,40
Length:	15 mm
Maximum Access Time:	.45 ns
No. of Words Code:	4M
Nominal Supply Voltage / Vsup (V):	1.8
Additional Features:	PIPELINED ARCHITECTURE
Peak Reflow Temperature (C):	260
Parallel or Serial:	PARALLEL
Terminal Pitch:	1 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	1.9 V
Power Supplies (V):	1.5/1.8,1.8

Pricing (USD)

Qty.	Unit Price	Ext. Price
406	$271.360	$110,172.160

LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MBRM140T1G by Onsemi is a Schottky rectifier diode with 40V max repetitive peak reverse voltage, 1A max output current, and 0.3V max forward voltage. It is used in applications requiring small outline surface mount diodes for efficient power management.

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;

MBRS130LT3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.445V. It operates b/w -65 to 125°C, has a reverse test voltage of 30V, and is ideal for power applications due to its small outline package style.