Infineon Technologies - CYXXXX-1XW

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CYXXXX-1XW by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number CYXXXX-1XW
Description SRAMs;
Datasheet CYXXXX-1XW Datasheet
In Stock989
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5962-8866204NA by National Semiconductor

5962-8866204NA

National Semiconductor

National Semiconductor's 5962-8866204NA is a MILITARY-grade SRAM with 32KX8 organization, 262144 bit memory density, and 45 ns max access time. Ideal for applications requiring fast and reliable parallel memory storage in harsh environments.
CY7C1011DV33-10BVXI by Infineon Technologies

CY7C1011DV33-10BVXI

Infineon Technologies

Infineon's CY7C1011DV33-10BVXI is a 128Kx16 SRAM with 3.3V supply, 10ns access time, and 85°C max temp. Ideal for industrial applications requiring fast and reliable memory storage in a compact grid array package.
23LC1024T-E/SN by Microchip Technology

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Microchip Technology

23LC1024T-E/SN by Microchip Technology is a synchronous SRAM with 128KX8 organization and 1048576 bit memory density. It operates at a max clock frequency of 16 MHz and has a min standby voltage of 2.5 V. This memory IC is commonly used in automotive applications due to its TS 16949 screening level and temperature grade.
CY7C1020DV33-10ZSXI by Cypress Semiconductor

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Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G44;
CY14B101LA-SZ45XIT by Cypress Semiconductor

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Cypress Semiconductor

NON-VOLATILE SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;
71321SA35TFG by Renesas Electronics

71321SA35TFG

Renesas Electronics

Renesas Electronics 71321SA35TFG is a 2Kx8 MULTI-PORT SRAM with 35ns access time, operating at 5V. It features a low profile flatpack package and operates in asynchronous mode. Ideal for applications requiring fast memory access in commercial temperature environments.
23LC512-I/P by Microchip Technology

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CY7C1041GN30-10BVXIT by Infineon Technologies

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Infineon Technologies

CY7C1041GN30-10BVXIT by Infineon: 256Kx16 SRAM with 10ns access time, operates at -40 to 85°C. Ideal for industrial applications requiring fast and reliable parallel memory storage. Package style: grid array, very thin profile, fine pitch.
CY7C1061G30-10ZSXI by Cypress Semiconductor

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Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Access Time: 10 ns;
CY14B104LA-ZS25XIT by Infineon Technologies

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Infineon's CY14B104LA-ZS25XIT is a 512Kx8 SRAM with 3V nominal voltage, operating in industrial temperature range. It features parallel technology, 25ns access time, and non-volatile memory type. Ideal for applications requiring fast and reliable data storage in compact electronic devices.
CY62128ELL-45SXIT by Infineon Technologies

CY62128ELL-45SXIT

Infineon Technologies

Infineon's CY62128ELL-45SXIT is a 128Kx8 SRAM with 45ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in compact designs.
5962-8855206YA by Austin Semiconductor

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Austin Semiconductor

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 32; Package Code: QCCN; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 5.5 V;
CY62168EV30LL-45BVXI by Infineon Technologies

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Infineon Technologies

Infineon's CY62168EV30LL-45BVXI is a 2MX8 SRAM with 3.6V max supply voltage, 45ns access time, and 1.5V min standby voltage. Ideal for industrial applications requiring fast and reliable memory storage in a compact grid array package with very thin profile and fine pitch design.
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IS61WV10248BLL-10TLI by Integrated Silicon Solution

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Integrated Silicon Solution

IS61WV10248BLL-10TLI by Integrated Silicon Solution is a 1MX8 SRAM with 3-STATE output, operating at 3.6V max supply voltage and 10ns access time. Ideal for industrial applications requiring fast and reliable memory storage in a small outline package.
71256SA20PZGI8 by Renesas Electronics

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Renesas Electronics

STANDARD SRAM; Terminal Finish: Matte Tin (Sn) - annealed; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
IDT71V016SA15PHGI8 by Renesas Electronics

IDT71V016SA15PHGI8

Renesas Electronics

The Renesas Electronics IDT71V016SA15PHGI8 is a 64KX16 SRAM with 3.3V supply voltage, operating in industrial temperature range. It features asynchronous operation, 15ns access time, and 3-STATE output type. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
CY62147EV30LL-45B2XIT by Infineon Technologies

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Infineon Technologies

Infineon's CY62147EV30LL-45B2XIT is a 256Kx16 SRAM with 3.6V max supply, 45ns access time, and operates in industrial temperature range. It features a grid array package style with very thin profile and fine pitch, suitable for applications requiring fast and reliable memory storage in harsh environments.
CY14V101NA-BA45XIT by Infineon Technologies

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Infineon Technologies

Infineon's CY14V101NA-BA45XIT is a 64Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features parallel technology, 45ns access time, and non-volatile memory type. Ideal for applications requiring fast and reliable data storage in harsh environments.
CY62167G30-45BVXA by Infineon Technologies

CY62167G30-45BVXA

Infineon Technologies

Infineon's CY62167G30-45BVXA is a 1MX16 SRAM with 45ns access time, operating at 3.6V. It features a very thin profile grid array package suitable for industrial applications requiring fast and reliable memory storage. With common I/O type and output enable function, it offers high-speed parallel data processing capabilities in harsh environments.