Infineon Technologies - CYXXXX-3X11

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CYXXXX-3X11 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number CYXXXX-3X11
Description SRAMs;
Datasheet CYXXXX-3X11 Datasheet
In Stock904
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CY62167EV30LL-45ZXA by Infineon Technologies

CY62167EV30LL-45ZXA

Infineon Technologies

CY62167EV30LL-45ZXA by Infineon Technologies is a 1MX16 SRAM with 3.6V max supply voltage, 45ns access time, and 30mA max supply current. It's ideal for industrial applications requiring high-speed data storage in a compact package with common I/O type and asynchronous operation mode.
CY62167EV18LL-55BVXIT by Infineon Technologies

CY62167EV18LL-55BVXIT

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CY62167EV18LL-55BVXIT by Infineon Technologies is a 1MX16 SRAM with 55ns access time and operates at 1.8V. It features a very thin profile, fine pitch grid array package style suitable for industrial applications. This CMOS memory IC offers common I/O type and 3-state output characteristics in a compact form factor ideal for high-speed parallel data processing.
CY7C028V-20AI by Cypress Semiconductor

CY7C028V-20AI

Cypress Semiconductor

CY7C028V-20AI by Cypress Semiconductor is a 64Kx16 SRAM with 3.3V supply voltage, operating at -40 to 85°C. It features asynchronous mode, common I/O type, and 20ns access time. Ideal for industrial applications requiring fast and reliable memory storage in a compact square package.
R1LV3216RSA-5SI#B0 by Renesas Electronics

R1LV3216RSA-5SI#B0

Renesas Electronics

Renesas Electronics' R1LV3216RSA-5SI#B0 is a 2MX16 SRAM with a memory density of 33554432 bit. It operates asynchronously at a max access time of 55 ns and has a small outline, thin profile package style. It is commonly used in industrial applications requiring fast and reliable data storage.
CY7C1061G30-10BVJXIT by Infineon Technologies

CY7C1061G30-10BVJXIT

Infineon Technologies

CY7C1061G30-10BVJXIT by Infineon Technologies is a 1MX16 SRAM with 10ns access time, operating at 3V. It features a very thin profile grid array package and operates in industrial temperature range. Ideal for high-speed parallel memory applications requiring fast data access and reliable performance.
DS1995L-F5+ by Maxim Integrated

DS1995L-F5+

Maxim Integrated

NON-VOLATILE SRAM; Temperature Grade: OTHER; No. of Terminals: 2; Package Shape: ROUND; Surface Mount: YES; Technology: CMOS;
IS66WVS2M8BLL-104NLI by Integrated Silicon Solution

IS66WVS2M8BLL-104NLI

Integrated Silicon Solution

IS66WVS2M8BLL-104NLI by Integrated Silicon Solution is a 2MX8 SRAM with synchronous operation and 104 MHz clock frequency. It has a memory density of 16Mb and operates at an industrial temperature grade. Ideal for applications requiring fast, reliable memory storage in compact electronic devices.
CY62157EV30LL-45ZSXIT by Infineon Technologies

CY62157EV30LL-45ZSXIT

Infineon Technologies

CY62157EV30LL-45ZSXIT by Infineon Technologies is a 512Kx16 SRAM with a supply voltage of 2.5/3.3V, operating in industrial temperature range. It features an asynchronous mode, 45ns access time, and output enable function. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
CY14B104NA-BA25XIT by Infineon Technologies

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Infineon's CY14B104NA-BA25XIT is a 256Kx16 SRAM with 3V nominal voltage. Operating asynchronously, it offers fast access time of 25ns and low standby current of 0.005Amp. Ideal for industrial applications requiring high-speed memory with non-volatile storage capabilities.
5962-8685909LA by Pyramid Semiconductor

5962-8685909LA

Pyramid Semiconductor

OTHER SRAM; Temperature Grade: MILITARY; No. of Terminals: 24; Package Code: DIP; Package Shape: RECTANGULAR; Power Supplies (V): 5;
DS1220AD-200+ by Analog Devices

DS1220AD-200+

Analog Devices

DS1220AD-200+ by Analog Devices is a 2Kx8 CMOS SRAM with 16384-bit memory density. Operating at 5V, it has a max access time of 200ns and consumes up to 75mA. Ideal for commercial applications requiring non-volatile memory in microelectronic assemblies.
71024S15YGI by Integrated Device Technology

71024S15YGI

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: SOJ; Package Shape: RECTANGULAR; Width: 10.16 mm;
5962-8866204NA by Austin Semiconductor

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Austin Semiconductor

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Memory Density: 262144 bit;
CY7C1071DV33-12BAXIT by Infineon Technologies

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Infineon Technologies

CY7C1071DV33-12BAXIT by Infineon Technologies is a 2MX16 SRAM with 3.3V supply, 12ns access time, and 48 terminals. It operates in industrial temperatures and has a thin profile grid array package. Ideal for applications requiring fast parallel memory access in harsh environments.
IDT71V424S10PHGI by Renesas Electronics

IDT71V424S10PHGI

Renesas Electronics

The Renesas Electronics IDT71V424S10PHGI is a 512Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous operation, 10ns access time, and 44 terminals in a small outline package. Ideal for industrial applications requiring fast and reliable memory storage.
RMLV0816BGSA-4S2#AA0 by Renesas Electronics

RMLV0816BGSA-4S2#AA0

Renesas Electronics

Renesas Electronics RMLV0816BGSA-4S2#AA0 is a 512Kx16 SRAM with 45ns access time, operating at 3.6V. It features common I/O type, 3-state output characteristics, and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.
DM74LS189J by National Semiconductor

DM74LS189J

National Semiconductor

DM74LS189J by National Semiconductor is a 16X4 SRAM with TTL technology. It operates asynchronously in commercial temperature range of 0-70°C. Featuring 3-STATE output, it is ideal for parallel memory applications.
CY7C1079DV33-12BAXIT by Cypress Semiconductor

CY7C1079DV33-12BAXIT

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 12 ns;
APS6404L-3SQR-ZR by Ap Memory Technology

APS6404L-3SQR-ZR

Ap Memory Technology

APS6404L-3SQR-ZR by Ap Memory Technology is a 8MX8 SRAM with 67108864 bit memory density. It operates synchronously at up to 133 MHz with a supply voltage range of 2.7V to 3.6V. Ideal for applications requiring fast and reliable memory access in compact electronic devices.
AS6C4008-55SINTR by Alliance Memory

AS6C4008-55SINTR

Alliance Memory

Alliance Memory's AS6C4008-55SINTR is a 512Kx8 SRAM with 55ns access time, operating at 3V. Ideal for industrial applications, it features common I/O type and 3-state output characteristics in a small outline package. With parallel interface and low standby current, it suits various embedded systems.