DD1000S33HE3BOSA1 by Infineon Technologies | Diodes

Image shown is a representation only.

Manufacturer	Infineon Technologies
Manufacturer's Part Number	DD1000S33HE3BOSA1
Description	RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: UNSPECIFIED; No. of Terminals: 7; Surface Mount: NO; Package Shape: RECTANGULAR;
Datasheet	DD1000S33HE3BOSA1 Datasheet
In Stock	727

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Forward Voltage (VF):	3.25 V
Config:	SEPARATE, 2 ELEMENTS
Diode Type:	RECTIFIER DIODE
Maximum Output Current:	1000 A
Sub-Category:	Other Diodes
Surface Mount:	NO
No. of Terminals:	7
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X7
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
No. of Phases:	1
Maximum Repetitive Peak Reverse Voltage:	3300 V
Minimum Operating Temperature:	-50 Cel
Diode Element Material:	SILICON
Qualification:	Not Qualified
Maximum Power Dissipation:	1600000 W
Peak Reflow Temperature (C):	NOT SPECIFIED
Application:	GENERAL PURPOSE

Pricing (USD)

Qty.	Unit Price	Ext. Price
727	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL; JESD-30 Code: R-PDIP-T18;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

LM555CMX by Texas Instruments is an Analog Waveform Generation IC with 8 terminals. It operates at a nominal voltage of 5V and supports power supplies ranging from 5V to 15V. This versatile IC, housed in a small outline package, is commonly used for pulse and rectangular waveform generation in commercial temperature environments.

Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.

IRLML6402TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 20V DS Breakdown Voltage, 22A IDM, and 0.065 ohm RDS(on). With a small outline package and matte tin finish, it operates in temperatures from -55 to 150 °C.