Infineon Technologies - DF900R12IP4DBOSA1

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DF900R12IP4DBOSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number DF900R12IP4DBOSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Package Body Material: UNSPECIFIED; Transistor Application: POWER CONTROL;
Datasheet DF900R12IP4DBOSA1 Datasheet
In Stock311
NAME DESCRIPTION
Other Names: SP000721126
DF900R12IP4DBOSA1-ND
448-DF900R12IP4DBOSA1
DF900R12IP4D-ND
DF900R12IP4D
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 900 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Nominal Turn Off Time (toff): 1300 ns
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 370 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 175 Cel
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
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