DT150N26KOC by Infineon Technologies | Triggering Devices

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	DT150N26KOC
Description	SCR; Package Style (Meter): FLANGE MOUNT; Surface Mount: NO; Terminal Position: UPPER; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Case Connection: ISOLATED;
Datasheet	DT150N26KOC Datasheet
In Stock	292

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Trigger Device Type:	SCR
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Surface Mount:	NO
Maximum Leakage Current:	50 mA
Minimum Critical Rate of Rise of Off-state Voltage:	500 V/us
Maximum Holding Current:	300 mA
No. of Terminals:	5
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X5
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	125 Cel
Case Connection:	ISOLATED
Repetitive Peak Off-state Voltage:	2600 V
Maximum RMS On-state Current:	350 A
Repetitive Peak Reverse Voltage:	2600 V
Maximum On-state Voltage:	2.6 V
Minimum Operating Temperature:	-40 Cel
Non Repetitive Peak On-state Current:	4500 A
Maximum DC Gate Trigger Voltage:	2 V
Maximum DC Gate Trigger Current:	200 mA
Maximum On-state Current:	223 A
Peak Reflow Temperature (C):	NOT SPECIFIED
Nominal Circuit Commutated Turn-off Time:	300 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
292	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;

BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Technology: BIPOLAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;