ESD24VS1U-03W by Infineon Technologies | Diodes

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	ESD24VS1U-03W
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	ESD24VS1U-03W Datasheet
In Stock	652

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Breakdown Voltage:	32 V
Config:	SINGLE
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum Repetitive Peak Reverse Voltage:	24 V
Surface Mount:	YES
Terminal Finish:	MATTE TIN
JESD-609 Code:	e3
Diode Element Material:	SILICON
No. of Terminals:	2
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	230 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDSO-G2
Minimum Breakdown Voltage:	26 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	LOW CAPACITANCE
Polarity:	UNIDIRECTIONAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
652	-	-

BUFFER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 6; Package Code: TSSOP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.

Texas Instruments DRV5053VAQLPG is a magnetic field sensor with 2.5-38V supply voltage range, -40 to 125°C operating temperature, and 0-2V output. Ideal for applications requiring Hall effect sensors like automotive, industrial automation, and robotics due to its compact size (1.52" x 4mm) and high output current capability of 2.3A.

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;