F4-15MR12W2M1_B76 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	F4-15MR12W2M1_B76
Description	N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Feedback Capacitance (Crss): 42 pF; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-XUFM-X15;
Datasheet	F4-15MR12W2M1_B76 Datasheet
In Stock	571

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	42 pF
Maximum Pulsed Drain Current (IDM):	150 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	15
Minimum DS Breakdown Voltage:	1200 V
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X15
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Reference Standard:	UL RECOGNIZED
Case Connection:	ISOLATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
571	-	-

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