Infineon Technologies - F4-200R17N3E4

F4-200R17N3E4 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number F4-200R17N3E4
Description N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: UNSPECIFIED;
Datasheet F4-200R17N3E4 Datasheet
In Stock439
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.25 V
Surface Mount: NO
Nominal Turn Off Time (toff): 1160 ns
No. of Terminals: 30
Terminal Position: UPPER
Nominal Turn On Time (ton): 270 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X30
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Maximum Collector-Emitter Voltage: 1700 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL RECOGNIZED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.3 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
439 - -

Popular Products

Category Top Products