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Manufacturer | Infineon Technologies |
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Manufacturer's Part Number | F4-200R17N3E4 |
Description | N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Package Body Material: UNSPECIFIED; |
Datasheet | F4-200R17N3E4 Datasheet |
In Stock | 439 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | POWER CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6.25 V |
Surface Mount: | NO |
Nominal Turn Off Time (toff): | 1160 ns |
No. of Terminals: | 30 |
Terminal Position: | UPPER |
Nominal Turn On Time (ton): | 270 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-XUFM-X30 |
No. of Elements: | 4 |
Package Shape: | RECTANGULAR |
Terminal Form: | UNSPECIFIED |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -40 Cel |
Maximum Collector-Emitter Voltage: | 1700 V |
Maximum Gate-Emitter Voltage: | 20 V |
Reference Standard: | UL RECOGNIZED |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Maximum VCEsat: | 2.3 V |